Material Properties of Si-Ge/Ge Quantum Wells
نویسندگان
چکیده
منابع مشابه
Si/SiO2 Multiple Quantum Wells: Electronic and Optical Properties
Theoretical investigation of the size effect in Si/SiO2 multiple quantum wells (MQW) is undertaken. Two modifications of the standard rectangular potential well model are introduced that provides satisfactory fit of the experimentally observed size effect in samples with extremely thin silicon layers. Both linear and nonlinear conductivity tensors of the Si/SiO2 MQW are calculated. Generalized ...
متن کاملSi/SiGe Quantum Devices and Quantum Wells: Electron Spin Coherence
1 Department of Physics, University of Wisconsin, Madison, Wisconsin 53706, USA 2 Cavendish Laboratory, Madingly Road, Cambridge CB3 OHE, UK 3 IBM Research Division, T. J. Watson Research Center, New York 10598, USA 4 Department of Physics, Simon Fraser University, Burnaby, BC V5A 1S6, Canada 5 Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA 6 Depart...
متن کاملMaterial gain engineering in GeSn/Ge quantum wells integrated with an Si platform
It is shown that compressively strained Ge1-xSnx/Ge quantum wells (QWs) grown on a Ge substrate with 0.1 ≤ x ≤ 0.2 and width of 8 nm ≤ d ≤ 14 nm are a very promising gain medium for lasers integrated with an Si platform. Such QWs are type-I QWs with a direct bandgap and positive transverse electric mode of material gain, i.e. the modal gain. The electronic band structure near the center of Bril...
متن کاملNanoscale distortions of Si quantum wells in Si/SiGe quantum-electronic heterostructures.
O N Devices exploiting individual quantum states of electrons promise to extend dramatically the capabilities of silicon integrated electronics. One route to forming such devices is via coup led electrostatically defi ned quantum dots in which electrons are confi ned in a thin strained Si layer on SiGe. [ 1 , 2 ] The unique advantage of forming such quantum dots in Si is the long quantum dephas...
متن کاملCharacterization of Si/Si 1 -,Ge,/Si quantum wells by cathodoluminescence imaging and spectroscopy
Cathodoluminescence (CL) imaging and spectroscopy have been used to characterize fully strained SiGe quantum wells grown on Si. At T-5 K, the CL spectra contain only band edge luminescence features. Monochromatic imaging with the no-phonon line attributed to the bound excitons in the quantum well, has shown that the distribution of the luminescence from the wells is not uniform. The thinnest we...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of Selected Topics in Quantum Electronics
سال: 2008
ISSN: 1077-260X
DOI: 10.1109/jstqe.2008.918935